发明名称 半導体スイッチング素子における電圧降下の正確な測定
摘要 PROBLEM TO BE SOLVED: To provide an improved apparatus, method and system for measuring a voltage reduction in a semiconductor switching element.SOLUTION: The apparatus has a first circuit path including a first protection element, a first impedance element and a voltage source. The first circuit path is connected between a first terminal and a second terminal of a semiconductor switching element. The apparatus further has a second circuit path which is formed between a first output terminal and a second output terminal and which includes a second protection element and a second impedance element. Here, the second protection element is the same as the first protection element and the second impedance element is the same as the first impedance element. The apparatus still further has a control circuit for controlling the current of the second circuit path so that the current of the second circuit path is equal to the current of the first circuit path.
申请公布号 JP2015206792(A) 申请公布日期 2015.11.19
申请号 JP20150084788 申请日期 2015.04.17
申请人 发明人
分类号 G01R19/00;G01R31/26;H02M1/00 主分类号 G01R19/00
代理机构 代理人
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