HIGH DENSITY FINFET DEVICES WITH UNMERGED FINS

摘要

Embodiments of the present invention provide a finFET and method of fabrication to achieve advantages of both merged and unmerged fins. A first step of epitaxy is performed with either partial diamond or full diamond growth. This is followed by a second step of deposition of a semiconductor cap region on the finFET source/drain area using a directional deposition process, followed by an anneal to perform Solid Phase Epitaxy or poly recrystalization. As a result, the fins remain unmerged, but the epitaxial volume is increased to provide reduced contact resistance. Embodiments of the present invention allow a narrower fin pitch, which enables increased circuit density on an integrated circuit.

主权项

1. A method of forming a semiconductor structure, comprising:
forming a plurality of semiconductor fins on an insulator layer that is disposed on a semiconductor substrate; forming an epitaxial semiconductor region on each fin of the plurality of semiconductor fins; forming a semiconductor cap region on an upper portion of each of the epitaxial semiconductor regions, wherein the semiconductor cap region is disposed above, and separated from, the insulator layer; and performing an anneal on the semiconductor structure to convert the semiconductor cap region to a crystalline semiconductor cap region.