发明名称 |
MULTI-HEIGHT MULTI-COMPOSITION SEMICONDUCTOR FINS |
摘要 |
A dielectric material layer is formed on a semiconductor-on-insulator (SOI) substrate including a top semiconductor layer containing a first semiconductor material. An opening is formed within the dielectric material layer, and a trench is formed in the top semiconductor layer within the area of the opening by an etch. A second semiconductor material is deposited to a height above the top surface of the top semiconductor layer employing a selective epitaxy process. Another dielectric material layer can be deposited, and another trench can be formed in the top semiconductor layer. Another semiconductor material can be deposited to a different height employing another selective epitaxy process. The various semiconductor material portions can be patterned to form semiconductor fins having different heights and/or different compositions. |
申请公布号 |
US2015333087(A1) |
申请公布日期 |
2015.11.19 |
申请号 |
US201514809919 |
申请日期 |
2015.07.27 |
申请人 |
International Business Machines Corporation |
发明人 |
Greene Brian J.;Hong Augustin J.;Kim Byeong Y.;Mocuta Dan M. |
分类号 |
H01L27/12;H01L29/16;H01L29/04;H01L29/165 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |