FIELD EFFECT TRANSISTOR STRUCTURE HAVING ONE OR MORE FINS

摘要

A field effect transistor (FET) having one or more fins provides an extended current path as compared to conventional finFETs. A raised source terminal is disposed on a fin adjacent to a sidewall spacer of a gate structure. The drain terminal and a first portion of the gate structure overlie a first well of a first conductivity type. A raised drain terminal is disposed such that it is spaced apart from the gate structure sidewalls. In some embodiments the drain terminal is disposed on a second, separate fin. The drain terminal and a second portion of the gate structure overlie a second well of a second conductivity type.

主权项

1. A transistor, comprising:
a first fin disposed on a first region of a substrate, the first fin having a first end and second end; a second fin disposed on a second region of the substrate and spaced apart from the first fin, the second fin having a first end and a second end; a gate structure disposed on the first fin, the gate structure having a first sidewall and a second sidewall, with the second sidewall vertically aligned with the second end of the first fin; a first source/drain (S/D) terminal disposed on the first fin, adjacent to the first sidewall of the gate structure; a second S/D terminal disposed on the second fin; a first fin termination structure disposed on the first fin and vertically aligned to the first end of the first fin; a second fin termination structure disposed on the second fin and vertically aligned to the second end of the first fin; and a third fin termination structure disposed on the second fin and aligned to the second end of the second fin.