发明名称 GAS BARRIER FILM, AND METHOD FOR MANUFACTURING SAME
摘要 The present invention relates to a gas barrier film including: an inorganic layer which contains oxygen atoms; and an organic-inorganic mixed layer which contains silica (SiO2) formed on one surface of the inorganic layer. The inorganic layer has a first area that is adjacent to the organic-inorganic mixed layer; and a second area that is present below the first area in the thickness direction of the inorganic layer. The number of the oxygen (O) atoms in the first area is greater than the number of the oxygen atoms in the second area which is equal in volume to the first area. The gas barrier film is excellent in terms of gas barrier properties, flexibility, transparency, and crack prevention. In addition, the gas barrier film enables non-vacuum wet coating and is thus advantageous in shortening the manufacturing time.
申请公布号 US2015331153(A1) 申请公布日期 2015.11.19
申请号 US201314758460 申请日期 2013.12.20
申请人 CHEIL INDUSTRIES INC. 发明人 KANG Se Yeong;LEE Dae Gyu;KIM Byung Soo;LEE Eun Hwa;KWAK Taek Soo;KIM Sung Kook
分类号 G02B1/18;B05D3/02;B05D3/14;B05D1/00 主分类号 G02B1/18
代理机构 代理人
主权项 1. A gas barrier film comprising: an inorganic layer containing oxygen atoms; and an organic-inorganic hybrid layer formed on one surface of the inorganic layer and containing silica (SiO2), wherein the inorganic layer comprises a first area adjacent to the organic-inorganic hybrid layer and a second area located below the first area in a thickness direction of the inorganic layer, and the first area contains more oxygen (O) atoms than the second area in the same volume.
地址 Gumi-si Gyeongsangbuk-do KR