发明名称 METHOD FOR PURIFYING AND MICRO-ETCHING SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for improving the whole performance and appearance of a semiconductor wafer by removing pollutant from the semiconductor wafer after cutting a semiconductor ingot, and minimizing wafer pollution by conductive metal degrading the efficiency of a solar battery.SOLUTION: Inorganic and organic pollutants are removed from a semiconductor wafer with alkaline aqueous solution including one or more types of quaternary ammonium hydroxide, one or more types of alkali hydroxide and one or more types of mid-range alkoxylate, and the semiconductor wafer is micro-etched.
申请公布号 JP2015207768(A) 申请公布日期 2015.11.19
申请号 JP20150106341 申请日期 2015.05.26
申请人 ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 ROBERT K BAR;CHAN RAYMOND
分类号 H01L21/304;C11D1/72;C11D1/722;C11D3/04;C11D3/30;H01L21/306 主分类号 H01L21/304
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