发明名称 |
METHOD FOR PURIFYING AND MICRO-ETCHING SEMICONDUCTOR WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for improving the whole performance and appearance of a semiconductor wafer by removing pollutant from the semiconductor wafer after cutting a semiconductor ingot, and minimizing wafer pollution by conductive metal degrading the efficiency of a solar battery.SOLUTION: Inorganic and organic pollutants are removed from a semiconductor wafer with alkaline aqueous solution including one or more types of quaternary ammonium hydroxide, one or more types of alkali hydroxide and one or more types of mid-range alkoxylate, and the semiconductor wafer is micro-etched. |
申请公布号 |
JP2015207768(A) |
申请公布日期 |
2015.11.19 |
申请号 |
JP20150106341 |
申请日期 |
2015.05.26 |
申请人 |
ROHM & HAAS ELECTRONIC MATERIALS LLC |
发明人 |
ROBERT K BAR;CHAN RAYMOND |
分类号 |
H01L21/304;C11D1/72;C11D1/722;C11D3/04;C11D3/30;H01L21/306 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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