| 摘要 |
PROBLEM TO BE SOLVED: To provide an inter-wiring connection structure which achieves low connection resistance while suppressing an increase in wiring sheet resistance to a semiconductor device.SOLUTION: A semiconductor device having a multilayer wiring structure which includes a first wiring layer, a second wiring layer located in an upper layer of the first wiring layer and a plug for electrically connecting the first wiring layer and the second wiring layer, in which a bottom face of the plug is connected to a first barrier metal layer which is formed on an aluminum or aluminum alloy layer among the first wiring layer and composed of a nitride, includes a second barrier metal layer which is provided between the first barrier metal layer and the aluminum or aluminum alloy layer, and has area smaller than that of the aluminum or aluminum alloy layer, and which is composed of a non-nitride. |
