发明名称 SEMICONDUCTOR DEVICE AND DRIVING SYSTEM
摘要 An output MOS transistor has a drain connected with a power supply and a source connected with an output terminal. The short-circuit MOS transistor has a source connected with the output terminal. The short-circuit MOS transistor is formed in a semiconductor substrate connected with the power supply. A switching device is formed in a semiconductor region which is formed in the semiconductor substrate, and contains a first diffusion layer connected with the gate of the output MOS transistor and a second diffusion layer formed in the semiconductor region and connected with the drain of the short-circuit MOS transistor.
申请公布号 US2015333674(A1) 申请公布日期 2015.11.19
申请号 US201514806917 申请日期 2015.07.23
申请人 RENESAS ELECTRONICS CORPORATION 发明人 FUKAMI Ikuo
分类号 H02P7/28;H03K17/687 主分类号 H02P7/28
代理机构 代理人
主权项 1. A high-side driver, including a semiconductor device, for use with a battery and a DC motor, the high-side driver comprising: a power supply terminal to be coupled to the battery; and an output terminal to be coupled to the DC motor, wherein the semiconductor device includes: an output MOS transistor having a drain coupled to the power supply terminal, a source coupled to the output terminal and a gate; a drive circuit coupled to the gate of the output MOS transistor and coupled to receive a control signal and for driving the gate of the output MOS transistor according to the control signal; a short-circuit MOS transistor having a source coupled to the output terminal, a gate coupled to receive the control signal and a drain; a first switching MOS transistor coupled between the drain of the short-circuit MOS transistor and the gate of the output MOS transistor; and a control circuit, wherein the short-circuit MOS transistor is formed on a semiconductor substrate coupled to the power supply terminal, wherein the first switching MOS transistor comprises: a first semiconductor region formed in the semiconductor substrate; a drain region formed in the first semiconductor region and coupled to the gate of the output MOS transistor; and a source region formed in the first semiconductor region and coupled to the drain of the short-circuit MOS transistor, wherein the first switching MOS transistor is turned on or off based on a voltage of the first semiconductor region, and wherein the control circuit controls the voltage of the first semiconductor region in response to the control signal.
地址 Kawasaki-shi JP