GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV or III-V HETEROSTRUCTURES

摘要

Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

主权项

1. A tunnel junction for a photovoltaic cell, said tunnel junction comprising:
a tunnel junction first layer comprising a group IV material having a first material composition; and a tunnel junction second layer comprising a group III-V material having a second material composition, said second material composition being different from said first material composition; wherein the tunnel junction first layer has p-type or n-type doping and the tunnel junction second layer has p-type or n-type doping opposite that of the doping of the tunnel junction first layer; wherein the tunnel junction is formed at a heterojunction between the tunnel junction first layer and the tunnel junction second layer; wherein the first material composition of the first layer is selected from the group consisting of Ge, Si, SiGe, CGe, GeSn, SiGeSn, and CSiGeSn; and wherein the second material composition of the second layer is selected from the group consisting of GaAs, AlGaAs, GaInAs, AlGaInAs, InP, GaP, GaInP, GaInPAs, AlInP, AlGaInP, InAs, InPAs, AlInAs, AlAs. GaSb, GaAsSb, InSb, GaInAsSb, GaInNAs, GaInNAsSb, GaN, AlN, InN, GaInN, AlGaN, AlInN, and AlGaInN.