发明名称 |
ZENER DIODE DEVICES AND RELATED FABRICATION METHODS |
摘要 |
Zener diode structures and related fabrication methods and semiconductor devices are provided. An exemplary semiconductor device includes first and second Zener diode structures. The first Zener diode structure includes a first region, a second region that is adjacent to the first region, and a third region adjacent to the first region and the second region to provide a junction that is configured to influence a first reverse breakdown voltage of a junction between the first region and the second region. The second Zener diode structure includes a fourth region, a fifth region that is adjacent to the fourth region, and a sixth region adjacent to the fourth region and the fifth region to provide a junction configured to influence a second reverse breakdown voltage of a junction between the fourth region and the fifth region, wherein the second reverse breakdown voltage and the first reverse breakdown voltage are different. |
申请公布号 |
US2015333189(A1) |
申请公布日期 |
2015.11.19 |
申请号 |
US201514810140 |
申请日期 |
2015.07.27 |
申请人 |
FREESCALE SEMICONDUCTOR INC. |
发明人 |
CHEN Weize;LIN XIin;PARRIS Patrice M. |
分类号 |
H01L29/866;H01L29/06;H01L29/66 |
主分类号 |
H01L29/866 |
代理机构 |
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代理人 |
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主权项 |
1. A diode comprising:
a first region having a first conductivity type; a second region having a second conductivity type, the first region overlying the second region and the second region being adjacent to the first region to provide a vertical junction between the first region and the second region; and a third region adjacent to the first region and the second region to provide a lateral junction between the third region and one of the first region or the second region, wherein:
the lateral junction influences a first reverse breakdown voltage of the vertical junction; anda second reverse breakdown voltage of the lateral junction is greater than the first reverse breakdown voltage of the vertical junction. |
地址 |
Austin TX US |