| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
A method for manufacturing a semiconductor device includes the steps of: forming, on a principal face of a substrate, a semiconductor layer including a first semiconductor region of a first conductivity type; and forming, in the semiconductor layer, a trench having a bottom located in the first semiconductor region. The method further includes a step of forming a trench bottom impurity region being of a second conductivity type and covering the bottom of the trench by performing annealing to cause part of the semiconductor layer corresponding to an upper corner portion of the trench to move to be placed on the bottom of the trench. |
| 申请公布号 |
US2015333175(A1) |
申请公布日期 |
2015.11.19 |
| 申请号 |
US201314377430 |
申请日期 |
2013.01.23 |
| 申请人 |
PANASONIC CORPORATION |
发明人 |
KIYOSAWA Tsutomu;KUDOU Chiaki;TOMITA Yuki |
| 分类号 |
H01L29/78;H01L29/66;H01L21/306;H01L21/02;H01L29/16;H01L21/04;H01L21/223;H01L21/324;H01L29/417 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, the method comprising the steps of:
forming, on a principal face of a substrate, a semiconductor layer including a first semiconductor region of a first conductivity type; forming, in the semiconductor layer, a trench having a bottom located in the first semiconductor region; and forming a trench bottom impurity region being of a second conductivity type and covering the bottom of the trench by performing annealing to cause part of the semiconductor layer to move to be placed on the bottom of the trench, the part corresponding to an upper corner portion of the trench. |
| 地址 |
Kadoma-shi, Osaka JP |
