METHODS OF FORMING NANOWIRE DEVICES WITH METAL-INSULATOR-SEMICONDUCTOR SOURCE/DRAIN CONTACTS AND THE RESULTING DEVICES

摘要

A device includes a gate structure and a nanowire channel structure positioned under the gate structure. The nanowire channel structure includes first and second end surfaces. The device further includes a first insulating liner positioned on the first end surface and a second insulating liner positioned on the second end surface. The device further includes a metal-containing source contact positioned on the first insulating liner and a metal-containing drain contact positioned on the second insulating liner.

主权项

1. A device, comprising:
a gate structure; a nanowire channel structure positioned under said gate structure, said nanowire channel structure comprising first and second end surfaces; a first insulating liner positioned on said first end surface; a second insulating liner positioned on said second end surface; a metal-containing source contact positioned on said first insulating liner; and a metal-containing drain contact positioned on said second insulating liner.