SEMICONDUCTIVE DEVICE AND ASSOCIATED METHOD OF MANUFACTURE

摘要

The disclosure relates to a semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, the plurality of active trenches extending from the first surface into the first semiconductive layer and having an active trench width, and a plurality of active cells, each active cell provided in the first semiconductive layer adjacent to an active trench, the active cells having an active cell width; and a termination region at a periphery of the first surface comprising: at least one termination trench, the at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than the active cell width, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body, and wherein conductive material is disposed on the first insulating layer within each of the active trenches.

主权项

1. A semiconductive device comprising a body having:
a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface;
an active region comprising:
a plurality of active trenches in the first surface, the plurality of active trenches extending from the first surface into the first semiconductive layer and having an active trench width, anda plurality of active cells, each active cell provided in the first semiconductive layer adjacent to an active trench, the active cells having an active cell width; and a termination region at a periphery of the first surface comprising:
at least one termination trench, the at least one termination trench extending from the first surface into the first semiconductive layer, anda number of termination trench separators having a width that is less than the active cell width, wherein the termination region has a width that is greater than the active trench width, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body, and wherein conductive material is disposed on the first insulating layer within each of the active trenches.