HIGH DENSITY STATIC RANDOM ACCESS MEMORY ARRAY HAVING ADVANCED METAL PATTERNING

摘要

Methods and apparatus directed toward a high density static random access memory (SRAM) array having advanced metal patterning are provided. In an example, provided is a method for fabricating an SRAM. The method includes forming, using a self-aligning double patterning (SADP) technique, a plurality of substantially parallel first metal lines oriented in a first direction in a first layer. The method also includes etching the substantially parallel first metal lines, using a cut mask, in a second direction substantially perpendicular to the first direction, to separate the substantially parallel first metal lines into a plurality of islands having first respective sides that are aligned in the first direction and second respective sides that are aligned the second direction. The method also includes forming, in a second layer, a plurality of second metal lines oriented in the first direction.

主权项

1. A method for fabricating a static random access memory, comprising:
forming, using a self-aligning double patterning technique, a plurality of substantially parallel first metal lines oriented in a first direction in a first layer; etching the substantially parallel first metal lines, using a cut mask, in a second direction substantially perpendicular to the first direction, to separate the substantially parallel first metal lines into a plurality of islands having first respective sides that are substantially aligned in the first direction and second respective sides that are substantially aligned the second direction; forming, in a second layer, a plurality of second metal lines oriented in the first direction; and forming a silicon-germanium p-type metal-oxide-silicon passgate transistor including a gate coupled to a second metal line in the plurality of second metal lines and a drain coupled to an island in the plurality of islands.