| 发明名称 |
WAFER PROCESSING METHOD |
| 摘要 |
A method of processing a wafer includes: a grinding step of grinding a back surface of the wafer to form, on the back side of the wafer, a recess corresponding to a device region and an annular projecting portion corresponding to a peripheral marginal region; and a splitting groove forming step of forming, after the grinding step is conducted, a splitting groove for splitting the device region and the peripheral marginal region from each other at the boundary between the recess and the annular projecting portion, the splitting groove extending from the front surface of the wafer to reach the back surface of the wafer. The splitting groove is formed by dry etching. |
| 申请公布号 |
US2015332909(A1) |
申请公布日期 |
2015.11.19 |
| 申请号 |
US201514704605 |
申请日期 |
2015.05.05 |
| 申请人 |
DISCO CORPORATION |
发明人 |
Suzuki Katsuhiko |
| 分类号 |
H01L21/02;H01L23/544;H01L21/78 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of processing a wafer having a device region in which devices are formed respectively in regions on a front surface of the wafer sectioned by a plurality of crossing predetermined division lines and a peripheral marginal region surrounding the device region, the method comprising:
a grinding step of grinding a back surface of the wafer to form, on a back side of the wafer, a recess corresponding to the device region and an annular projecting portion corresponding to the peripheral marginal region; and a splitting groove forming step of forming, after the grinding step is conducted, a splitting groove for splitting the device region and the peripheral marginal region from each other at a boundary between the recess and the annular projecting portion, the splitting groove extending from the front surface of the wafer to reach the back surface of the wafer, wherein the splitting groove is formed by dry etching. |
| 地址 |
Tokyo JP |
