MEMORY DEVICE

摘要

A memory device includes a first memory block, a second memory block, a reception circuit configured to receiving a repair address and compression information, and a nonvolatile memory circuit including a first region for repairing the first memory block and a second region for repairing the second memory block, and configured to program the repair address in both the first region and the second region when the compression information represents high compression and program the repair address in either the first region or the second region when the compression information represents low compression.

主权项

1. A memory device comprising:
a first memory block including a plurality of first memory cells; a second memory block including a plurality of second memory cell; a reception circuit suitable for receiving a repair address and compression information; and a nonvolatile memory circuit including a first region for repairing the first memory block and a second region for repairing the second memory block, and suitable for programming the repair address in both the first region and the second region when the compression information represents high compression and programming the repair address in either the first region or the second region when the compression information represents low compression.