发明名称 記憶装置、および制御方法
摘要 PROBLEM TO BE SOLVED: To provide a storage device and a control method capable of prevent a properly deleted memory cell from being erroneously determined as an over-deleted memory cell.SOLUTION: A voltage application part 103 switches a voltage to be applied to a word line of a second memory cell C2 according to a piece of received switching information 104. The switching information 104 is, for example, a piece of information representing a voltage. When a third memory cell C3 is in a state to delete a data, a detection section 101 detects that a value IDref of the first current flowing on a bit line BL coincides with a value Iref of a second current flowing between the drain and the source of the second memory cell C2. When the detection section 101 detects the coincidence, the storage section 102 stores a piece of information representing a voltage which is applied to a word line Wref of the second memory cell C2 by the voltage application part 103.
申请公布号 JP2015207331(A) 申请公布日期 2015.11.19
申请号 JP20140087679 申请日期 2014.04.21
申请人 发明人
分类号 G11C16/02 主分类号 G11C16/02
代理机构 代理人
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