| 摘要 |
Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a semiconductor substrate doped with a first conductivity-determining impurity. The semiconductor substrate has formed therein a first well doped with a second conductivity-determining impurity that is different from the first conductivity-determining impurity, a second well, formed within the first well, and doped with the first conductivity-determining impurity, and a third well spaced apart from the first and second wells and doped with the first conductivity-determining impurity. The integrated circuit further includes a floating gate structure formed over the semiconductor substrate. The floating gate structure includes a first gate element disposed over the second well and being separated from the second well with a dielectric layer, a second gate element disposed over the third well and being separated from the third well with the dielectric layer, and a conductive connector. |
