SEMICONDUCTOR DEVICE

摘要

A first diode having a front surface anode region is mounted on a P pattern, and a second diode having a front surface cathode region is mounted on an N pattern. At this time, the first diode and the second diode are formed such that a cathode region of a front surface anode region in a first vertical relationship and an anode region of a front surface cathode region in a second vertical relationship are always located as upper portions. The front surface anode region is electrically connected to the front surface cathode region with wires provided thereover.

主权项

1. A semiconductor device, comprising:
a first semiconductor element that is mounted on a first circuit pattern and has one first electrode region and the other first electrode region; and a second semiconductor element that is mounted on a second circuit pattern independently of said first semiconductor element and has one second electrode region and the other second electrode region, wherein said one first electrode region of said first semiconductor element is electrically connected to said other second electrode region of said second semiconductor element through an intermediate connection point, at least one semiconductor element of said first semiconductor element and said second semiconductor element is a diode, and said first and second semiconductor elements are formed such that a first vertical relationship of said one first electrode region with said other first electrode region coincides with a second vertical relationship of said other second electrode region with said one second electrode region.