Semiconductor Having A High Aspect Ratio Via

摘要

The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a via structure includes a via having via sidewall surfaces defined by a semiconductor substrate. The via sidewall surfaces have a first portion and a second portion. A conductive layer is disposed in the via on the first portion of the via sidewall surfaces, and a dielectric layer is disposed on the second portion of the via sidewall surfaces. The dielectric layer is disposed between the second portion of the via sidewall surfaces and the conductive layer. In an example, the dielectric layer is an oxide layer.

主权项

1. A method comprising:
forming a first substrate over a second substrate, the second substrate having a first dielectric layer disposed thereover; forming a via extending through the first substrate to the first dielectric layer disposed over the second substrate, the via having a first portion and a second portion; forming a second dielectric layer in the first and second portion of the via; removing a portion of the second dielectric in the first portion of the via; and forming a first conducive layer in the first and second portions of the via, wherein after forming the first conductive layer in the first and second portions of the via, the second dielectric extends continuously from an interface between the first and second portions of the via to the first dielectric layer disposed over the second substrate.