半導体装置及びその製造方法、電源装置

摘要

A semiconductor device includes a drift layer having a structure wherein a plurality of quantum dot layers each including a quantum dot containing InxGa1-xN (0≦̸x≦̸1) and a burying layer burying the quantum dot and containing n-type Inx(GayAl1-y)1-xN (0≦̸x≦̸1, 0≦̸y≦̸1) are stacked.