| 摘要 |
An area in a top view of a region where a low-voltage field effect transistor is formed is reduced, and an area in a top view of a region where a high-voltage field effect transistor is formed is reduced. An active region where the low-voltage field effect transistors (first nMIS and first pMIS) are formed is constituted by a first convex portion of a semiconductor substrate that projects from a surface of an element isolation portion, and an active region where the high-voltage field effect transistors (second nMIS and second pMIS) are formed is constituted by a second convex portion of the semiconductor substrate that projects from the surface of the element isolation portion, and a trench portion formed in the semiconductor substrate. |
