One-time programmable memory device comprising a fin structure

摘要

A field-effect transistor (FET) based one-time programmable (OTP) device is discussed. The OTP device includes a fin structure, a gate structure, a first contact region, and a second contact region. The first contact region includes an insulating region and a conductive region and is configured to be electrically isolated from the gate structure. The second contact region includes the conductive region and is configured to be electrically coupled to at least a portion of the gate structure. The OTP device is configured to be programmed by disintegration of the insulating region in response to a first voltage being applied to the first contact and a second voltage being applied to the second contact region simultaneously, where the second voltage is higher than the first voltage by a threshold value.