| 摘要 |
<p>Sputtering target comprises a mixture of oxides of indium, zinc and gallium and at least a ternary mixed oxide of indium, zinc and gallium. The amount of ternary mixed oxides of indium, zinc and gallium is at least 50 wt.% and the amount of amorphous phase is at least 20 wt.%, respectively based on the total weight of the mixture. An independent claim is also included for producing the sputtering target, comprising (a) providing a mixture of particles with an average particle diameter of 15-300 mu m, where the mixture has oxides of indium, gallium and zinc, and at least one mixed oxide having binary and ternary mixed oxides of indium, zinc and gallium, (b) heating the particles at 1500-2300[deg] C within a period of less than 10 ms; and (c) cooling the mixture to not > 300[deg] C for not > 10 ms.</p> |
