发明名称 |
Method for forming semiconductor layer and method for manufacturing light emitting device |
摘要 |
A method for manufacturing a light emitting device according to an embodiment of the present invention includes preparing a growth substrate; selectively forming a projection pattern on the growth substrate; forming a first conductive type semiconductor layer on the growth substrate and the projection pattern; forming an active layer on the first conductive type semiconductor layer; forming a second conductive type semiconductor layer on the active layer; and executing an isolation etching for selectively removing the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer including the projection pattern. |
申请公布号 |
EP2360743(A3) |
申请公布日期 |
2015.11.18 |
申请号 |
EP20100193162 |
申请日期 |
2010.11.30 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
KANG, DAE SUNG;HAN, SANG HOON |
分类号 |
H01L33/00;H01L33/02;H01L33/44 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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