发明名称 |
METHOD OF PROVIDING A BORON DOPED REGION IN A SUBSTRATE AND A SOLAR CELL USING SUCH A SUBSTRATE |
摘要 |
Method of providing a boron doped region (8, 8a, 8b) in a silicon substrate (1), includes the steps of: (a) depositing a boron doping source (6) over a first surface (2) of the substrate (1); (b) annealing the substrate (1) for diffusing boron from the boron doping source (6) into the first surface (2), thereby yielding a boron doped region; (c) removing the boron doping source (6) from at least part of the first surface (2); (d) depositing undoped silicon oxide (10) over the first surface (2); and (e) annealing the substrate (1) for lowering a peak concentration of boron in the boron doped region (8, 8a) through boron absorption by the undoped silicon oxide. The silicon oxide (10) acts as a boron absorber to obtain the desired concentration of the boron doped region (8). |
申请公布号 |
EP2943975(A1) |
申请公布日期 |
2015.11.18 |
申请号 |
EP20140700527 |
申请日期 |
2014.01.09 |
申请人 |
STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND |
发明人 |
KOMATSU, YUJI;ANKER, JOHN;BARTON, PAUL CORNELIS;ROMIJN, INGRID GERDINA |
分类号 |
H01L21/225;H01L21/324;H01L31/0224;H01L31/0352;H01L31/065;H01L31/068;H01L31/18 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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