| 摘要 |
<p>Provided is a photovoltaic device prepared with a compound semiconductor, capable of reducing hazardous property and improving efficiency, and a method for manufacturing the photovoltaic device, the photovoltaic device including a photoelectric conversion layer including a compound semiconductor, a semiconductor layer layered on a surface of the photoelectric conversion layer, a contact layer arranged on the opposite side of the semiconductor layer to the photoelectric conversion layer, and an electrode layered on a surface of the contact layer, wherein the semiconductor layer includes a first crystal including Al, In, and P, and the contact layer includes a second crystal including Ge as a main component, and the method including the steps of vapor-depositing a photoelectric conversion layer including a compound semiconductor on a substrate, vapor-depositing a semiconductor layer including a first crystal including Al, In, and P, on a surface of the photoelectric conversion layer which is formed, vapor-depositing a contact layer having a second crystal including Ge as a main component, on an upper surface side of the semiconductor layer which is formed, and forming an electrode on a surface of the contact layer which is formed.</p> |
