PHOTODETECTOR

摘要

Provided is a photodetector including a graphene p-n homogeneous vertical-junction diode by evaluating photodetection characteristics of the manufactured graphene p-n vertical junction according to the amount of doping. The photodetector comprises a substrate and graphene having a p-n homogeneous vertical junction as a photodetection layer formed on the substrate, wherein the photodetection layer has a detectability of 10E11 (Jones) or higher within the range of 350nm to 1100nm, and first and second electrodes are formed on the photodetection layer.