NEAR INFRARED LIGHT SOURCE IN BULK SILICON

摘要

A light emitting device (10) comprises a body (12) of a semiconductor material having a first face (14) and at least one other face (16). At least one pn-junction (18) in the body is located towards the first face and is configured to be driven via contacts on the body into a light emitting mode. The other face (16) of the body is configured to transmit from the body light emitted by the at least one pn-junction (18) in the near infrared part of the spectrum and having wavelengths longer than 1 μm.