| 摘要 |
The purpose of the present invention is to suppress damage to semiconductor devices, caused by an electromagnetic field in order to execute the annealing processing of the devices on a wafer by generating plasma with the electromagnetic field, and using the plasma. As a solution, in the semiconductor manufacturing method, capable of performing thermal treatment by plasma on a substrate (S) while relatively moving the substrate (S) with devices thereon against a plasma generating device (12) generating the plasma (P) by interacting the electromagnetic field with plasma gas, the plasma (P) of the plasma generating device (12) is emitted to a second surface (Sb) of the substrate (S) while the second surface (Sb) of the substrate (S), the opposite to a first surface (Sa) of the substrate (S), faces the plasma generating device (12). |
