METAL-SEMICONDUCTOR CONTACT STRUCTURE WITH DOPED INTERLAYER

摘要

A method for forming metal-semiconductor contact having a doped metal oxide interlayer is disclosed. An insulation layer is formed on the upper surface of a semiconductor substrate having a target area on the upper surface of the semiconductor substrate. An opening is etched through the insulation layer, and the opening exposes the upper surface of a portion of the target area. The doped metal oxide interlayer is formed inside the opening and comes in contact with the upper surface of the target area. The remaining portion of the opening is filled with a metal plug, and the doped metal oxide interlayer is disposed between the metal plug and the substrate. The doped metal oxide interlayer is formed from one material among a tin oxide or a titanium oxide or a zinc oxide and doped with fluorine.