| 摘要 |
The present invention relates to a method for melting a solid raw material for growing silicon single crystal using the Czochralski method. The method of the present invention comprises the following steps: (a) filling a solid raw material into a silica crucible; (b) selecting a location for maximum heat generation and measuring the distance between the location and the uppermost surface of a heater to set a reference value; (c) measuring a location value, which is a distance between the uppermost surface of the heater and the level of the surface of a raw material melted within the silica crucible; and (d) comparing the reference value with the location value, and moving up or down the silica crucible by a difference in the reference value and the location value so that the level of a location for maximum heat generation can be the same as the level of the surface of the solid raw material melted within the silica crucible. Therefore, when a solid raw material is melted, heat generated from the location for maximum heat generation can be transferred to the surface of a silicon solution to effectively melt the solid raw material from top to bottom within the silica crucible. |
