ｎ型窒化アルミニウム単結晶基板を用いた縦型窒化物半導体デバイス

摘要

A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm−3 and a dislocation density of 106 cm−2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.