| 摘要 |
In an active region, p+ regions are selectively disposed in a surface layer of an n− drift layer on an n+ semiconductor substrate. A p-base layer is disposed on surfaces of the n− drift layer and the P+ regions, and an MOS structure is disposed on the p-base layer. In another portion of the active region, a p+ region is disposed to be in contact with the source electrode on the p+ regions. In a breakdown voltage structure region (100), a JTE structure having at least a P− region is disposed separately from the P+ regions and the p-base layer, to surround the active region. The P− region is electrically in contact with the P+ region in a portion in which the MOS structure is not formed, in the vicinity of the boundary between the active region and the breakdown voltage structure region. |
