| 摘要 |
According to an embodiment, a method for manufacturing a semiconductor light emitting device includes steps for forming a fluorescent substance layer (30) on a first face of a semiconductor layer (15) and forming a light shielding film (35) on the side face of the fluorescent substance layer (30). The fluorescent substance layer (30) includes a resin (31) and fluorescent substances (32) dispersed in the resin (31), and have a light emitting face on a side opposite to the first face of the semiconductor layer (15) and a side face connecting to the light emitting face with an angle of 90 degree or more between the light emitting face and the side face. The light shielding film (35) shields a light emitted from a light emitting layer (13) included in the semiconductor layer (15) and a light radiated from the fluorescent substances (32). |
