| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of performing a high-frequency operation. <P>SOLUTION: A manufacturing method of a semiconductor device comprises the steps of: growing a GaN electron transit layer 16 on a substrate 10 disposed in a growth furnace; growing an InAlN electron supply layer 18 on the GaN electron transit layer 16 under the condition that a voltage division ratio of a nitrogen material gas in a mixed gas to be introduced into the growth furnace is 0.15 or higher and 0.35 or lower; and forming a gate electrode 26, and a source electrode 28 and a drain electrode 30 which sandwich the gate electrode 26 therebetween on the InAlN electron supply layer 18. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
