| 摘要 |
<p>A semiconductor EEPROM device comprising a first insulating film (14A) provided on a semiconductor substrate (13) in a cell transistor region, a first conductive film (15) provided on the first insulating film, an inter-electrode insulating film (16) provided on the first conductive film, a second conductive film (3a,3b) provided on the inter-electrode insulating film and having a first metallic silicide (3b) film on a top surface thereof, first source/drain regions (23) formed on a surface of the semiconductor substrate, a second insulating film (14B) provided on the semiconductor substrate in at least one of a selection gate transistor region and a peripheral transistor region, a third conductive film (3a,3b,22) provided on the second insulating film and having a second metallic silicide film (22) having a thickness smaller than a thickness of the first metallic silicide film (3b) on a top surface thereof, and a second source/drain (23a,23b) regions formed on the surface of the semiconductor substrate.</p> |
