| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting device, capable of preventing creeping up of thermo-setting resin, interposed between a semiconductor layer and a support substrate, to the semiconductor layer and a side face of a growth substrate. <P>SOLUTION: A semiconductor crystal is allowed to grow on a sapphire substrate 10 to form a semiconductor layer 20. A resin layer 40 made from thermo-setting resin is formed on the surface of a support substrate 30. Under such condition as the semiconductor layer 20 and the support substrate 30 are tightly fitted together with the resin layer 40 in between, the resin layer 40 is thermo-set so that the support substrate 30 and the semiconductor layer 20 are joined together. After thermo-setting of the resin layer 40, the sapphire substrate 10 is removed. Before the support substrate 30 and the semiconductor layer 20 are joined together, a fluidity control part 41 that decreases or negates fluidity of the resin layer 40 is formed at a surface layer part in a peripheral region at a portion contacting to the semiconductor layer 20 of the resin layer 40. <P>COPYRIGHT: (C)2013,JPO&INPIT |
