| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving alignment precision in mask alignment by relaxing a step of a thick oxide film, without any additional step. <P>SOLUTION: The method of manufacturing a semiconductor includes a step in which a drift layer is formed as a parallel pn layer on a semiconductor substrate 1 by epitaxial growth and selective ion implantation by using pattern alignment. When stacking is performed by repeating, in predetermined times, the epitaxial growth and the ion implantation so that the parallel pn layer comes to be a required thickness, a concave alignment mark 3 is formed on the surface of the epitaxial layer and a voltage resistant recess 4 is formed at a peripheral voltage resistant structure part at the same time. And then, a field oxide film 5a is formed which fills the depth of the voltage resistant recess 4 that has been transferred on the surface of an epitaxial layer 2f at a final stage. <P>COPYRIGHT: (C)2012,JPO&INPIT |
