发明名称 |
METAL NITRIDE FILM FOR THERMISTOR, PROCESS FOR PRODUCING SAME, AND THERMISTOR SENSOR OF FILM TYPE |
摘要 |
<p>Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: Ti x Al y N z (where 0.70 ‰¤ y/(x+y) ‰¤ 0.95, 0.4 ‰¤ z ‰¤ 0.5, and x+y+z = 1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100) /the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.</p> |
申请公布号 |
EP2833373(A4) |
申请公布日期 |
2015.11.18 |
申请号 |
EP20130767726 |
申请日期 |
2013.03.25 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
TANAKA, HIROSHI;FUJITA, TOSHIAKI;NAGATOMO, NORIAKI;FUJIWARA, KAZUTAKA;INABA, HITOSHI |
分类号 |
H01C7/04 |
主分类号 |
H01C7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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