SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device is provided. The semiconductor device includes a fin which protrudes from a substrate and is extended in a first direction, a recess formed in the pin, a device isolation layer filled in the recess, a dummy gate structure on the device isolation layer, a first and a second spacer which are arranged at both sides of the dummy gate structure on the pin, an inner spacer arranged on the inner sidewall of the first and second spacers, and a source/drain region separated from the device isolation layer, at both sides of the recess.