METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR

摘要

In one embodiment, a method of forming a semiconductor device may include forming a buried region within a semiconductor region, including forming an opening in the buried region. The method may also include forming a drift region of a second conductivity type in the semiconductor region with at least a portion of the drift region overlying a first portion of the buried region. Another portion of the method may include forming a first drain region of the second conductivity type in the drift region wherein the first drain region does not overlie the buried region.