发明名称 |
METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW |
摘要 |
An embodiment of a method of integration of a non-volatile memory device into a logic MOS flow is described. Generally, the method includes: forming a pad dielectric layer of a MOS device above a first region of a substrate; forming a channel of the memory device from a thin film of semiconducting material overlying a surface above a second region of the substrate, the channel connecting a source and drain of the memory device; forming a patterned dielectric stack overlying the channel above the second region, the patterned dielectric stack comprising a tunnel layer, a charge-trapping layer, and a sacrificial top layer; simultaneously removing the sacrificial top layer from the second region of the substrate, and the pad dielectric layer from the first region of the substrate; and simultaneously forming a gate dielectric layer above the first region of the substrate and a blocking dielectric layer above the charge-trapping layer. |
申请公布号 |
EP2831918(A4) |
申请公布日期 |
2015.11.18 |
申请号 |
EP20130767491 |
申请日期 |
2013.03.13 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION;RAMKUMAR, KRISHNASWAMY;JIN, BO;JENNE, FREDRICK |
发明人 |
RAMKUMAR, KRISHNASWAMY;JIN, BO;JENNE, FREDRICK |
分类号 |
H01L29/792;H01L21/28;H01L27/115;H01L29/51;H01L29/66 |
主分类号 |
H01L29/792 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|