MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

摘要

The present invention relates to a monomer represented by chemical formula (1), wherein R^1 represents H, CH_3 or CF_3; R^2 and R^3 represent hydrogen groups or monovalent hydrocarbon groups and may bound to each other to form substituent groups with carbon atoms bound to the same; X^1 represents a divalent hydrocarbon group and -CH_2- constituting the hydrocarbon group may be substituted with -O- or -C(=O)-; k represents 0 or 1; and Z represents a pentacyclic or hexacyclic substituent group which is formed with two carbon atoms, bound to the same, and may include hetero-atoms. A photoresist material according to the present invention has excellent storage stability and provides excellent general properties such as high dissolution contrast, high acid diffusion control, and low roughness when not only a positive-type pattern is formed by an existing alkali development but also an image is formed to reverse a positive image into a negative image in the development with an organic solvent.