发明名称 |
Liquid crystal display device and manufacturing method thereof and electronic device |
摘要 |
In a liquid crystal display device, an upper electrode and a drain electrode are reliably connected to each other electrically, with preventing or suppressing an occurrence of an aperture ratio loss, or sufficiently reducing a parasitic capacitance between the scanning line and the lower electrode. An interlayer resin film is formed on a drain electrode, with a hole being formed on the interlayer resin film, and on the drain electrode exposed to a bottom portion of the hole, an island-shaped electrode is formed separately from a lower electrode. Moreover, on the island-shaped electrode, an inter-electrode insulating film is formed, a contact hole is formed in the inter-electrode insulating film, and an upper electrode is formed on the island-shaped electrode exposed to a bottom portion of the contact hole. |
申请公布号 |
US9188821(B2) |
申请公布日期 |
2015.11.17 |
申请号 |
US201313944513 |
申请日期 |
2013.07.17 |
申请人 |
Japan Display Inc. |
发明人 |
Takeuchi Shumpei;Ota Akio |
分类号 |
G02F1/1362;G02F1/1343;G02F1/136 |
主分类号 |
G02F1/1362 |
代理机构 |
K&L Gates LLP |
代理人 |
K&L Gates LLP |
主权项 |
1. A liquid crystal display device comprising:
a first substrate; a second substrate that is disposed so as to be opposed to the first substrate; a liquid crystal layer sandwiched between the first substrate and the second substrate; a plurality of gate wirings provided on the first substrate along a first direction when seen in a plan view; a plurality of source wirings provided on the first substrate along a second direction intersecting with the first direction when seen in a plan view; a plurality of pixels delimited by the plurality of gate wirings and the plurality of source wirings; a thin-film transistor provided at an intersection between the gate wiring and the source wiring and includes a drain electrode; a first insulating film formed on the thin-film transistor; a first opening that penetrates the first insulating film to reach the drain electrode; a first electrode formed on the drain electrode that is exposed to the first opening, and electrically connected to the drain electrode; a second electrode formed on the first insulating film, and separated from the first electrode; a second insulating film formed on the first electrode and the second electrode; a second opening that penetrates the second insulating film to reach the first electrode; and a third electrode that is formed on the first electrode exposed to the second opening as well as on the second insulating film, and is electrically connected to the first electrode; and a light-shielding unit formed on each of portions between the plurality of pixels on the second substrate, wherein a third opening is formed in a region overlapped with the light-shielding unit on the second electrode when seen in a plan view, and wherein the first electrode and a bottom portion of the second opening are disposed inside the third opening when seen in a plan view. |
地址 |
Tokyo JP |