Polyimides as dielectric

摘要

The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of
i) forming a layer comprising photocurable polyimide A by applying photocurable polyimide A on a layer of the transistor or on the substrateii) irradiating the layer comprising photocurable polyimide A with light of a wavelength of >=360 nm in order to form the layer comprising polyimide B,

and a transistor obtainable by that process.

主权项

1. A process for the preparation of an organic field-effect transistor (OFET) on a substrate, which organic field-effect transistor comprises a layer, which layer comprises polyimide B, and an additional layer comprising a semiconducting material, wherein the semiconducting material comprises units having a diketopyrrolopyrrole group (DPP polymer),
wherein the process comprises
i) forming a layer comprising photocurable polyimide A by applying photocurable polyimide A as a solution in an organic solvent A on the layer comprising the semiconducting material, wherein the organic solvent A is a mixture of butyl acetate and cyclopentanone in a weight ratio of butyl acetate/cyclopentanone is at least from 99/1 to 20/80,ii) irradiating the layer comprising photocurable polyimide A with light of a wavelength of >=360 nm to form the layer comprising polyimide B.