| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film device using an oxide semiconductor as a channel and a method of manufacturing the same, that enable production of a self-aligned top gate structure even on a resin substrate such as PET, PES, and the like. <P>SOLUTION: A method of manufacturing a TFT for producing a channel film by an IGZO film 2, includes: producing, between the IGZO film 2 and a gate electrode film 4, an organic film that functions as a gate insulating film 3 by using an application method such as a spin coating and the like (Fig. 1(b)); and then producing, between the IGZO film 2 and source and drain electrode films 7 led out to outside, an interlayer film 5 that functions as an insulating film by using a sputtering method (Figs. 1(c) and (d)). <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
