Methods for making a semiconductor device with shaped source and drain recesses and related devices

摘要

A method for making a semiconductor device includes forming at least one gate stack on a layer comprising a first semiconductor material and etching source and drain recesses adjacent the at least one gate stack. The method further includes shaping the source and drain recesses to have a vertical side extending upwardly from a bottom to an inclined extension adjacent the at least one gate stack.

主权项

1. A semiconductor device comprising:
a layer comprising a first semiconductor material; at least one gate stack on said layer; source and drain regions comprising a second semiconductor material adjacent said at least one gate stack; each source and drain region having a bottom, a vertical side extending upwardly from the bottom, and an inclined extension extending from the vertical side adjacent the at least one gate stack, said bottom including at least one upwardly angled section that joins the vertical side; and a liner between each source and drain region and adjacent portions of said layer, said liner comprising the second semiconductor material having a dopant therein.