发明名称 |
Optoelectronic semiconductor component, method for producing same and use of such a component |
摘要 |
An opto-electronic component includes a housing, a radiation-emitting semiconductor chip and a radiation-detecting semiconductor chip. A first cavity and a second cavity are formed in the housing, wherein the radiation-emitting semiconductor chip is arranged in the first cavity and is cast by means of a first casting compound. The radiation-detecting semiconductor chip is arranged in the second cavity and cast by means of a second casting compound, wherein absorber particles are embedded in the second casting compound which are suitable for at least partially absorbing the radiation emitted by the radiation-emitting semiconductor chip. |
申请公布号 |
US9190553(B2) |
申请公布日期 |
2015.11.17 |
申请号 |
US201113991496 |
申请日期 |
2011.11.02 |
申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
Luruthudass Annaniah;Vicknes Ratha Krishnan |
分类号 |
H01L31/12;H01L31/147;H01L25/16 |
主分类号 |
H01L31/12 |
代理机构 |
DLA Piper LLP (US) |
代理人 |
DLA Piper LLP (US) |
主权项 |
1. An optoelectronic semiconductor component comprising a housing, a radiation-emitting semiconductor chip and a radiation-detecting semiconductor chip, wherein:
a first cavity and a second cavity are formed in the housing, the radiation-emitting semiconductor chip has an active layer that generates radiation and is arranged in the first cavity, which is potted with a first potting compound, the radiation-detecting semiconductor chip has an active layer that detects radiation and is arranged in the second cavity, which is potted with a second potting compound, and absorber particles are embedded in the second potting compound, the absorber particles at least partly absorbing the radiation emitted by the radiation-emitting semiconductor chip, wherein the radiation-detecting semiconductor chip: 1) detects only radiation in a wavelength range that differs from the wavelength range of the emitted radiation of the radiation-emitting semiconductor chip, 2) generates visible radiation having a wavelength of 400 nm to 700 nm during operation, 3) detects IR radiation having a wavelength of 800 nm to 1500 nm, and 4) detects external sunlight and switches off the radiation-emitting semiconductor chip if sunlight is detected and switches on the radiation-emitting semiconductor chip if no sunlight is detected. |
地址 |
DE |