发明名称 Optoelectronic semiconductor component, method for producing same and use of such a component
摘要 An opto-electronic component includes a housing, a radiation-emitting semiconductor chip and a radiation-detecting semiconductor chip. A first cavity and a second cavity are formed in the housing, wherein the radiation-emitting semiconductor chip is arranged in the first cavity and is cast by means of a first casting compound. The radiation-detecting semiconductor chip is arranged in the second cavity and cast by means of a second casting compound, wherein absorber particles are embedded in the second casting compound which are suitable for at least partially absorbing the radiation emitted by the radiation-emitting semiconductor chip.
申请公布号 US9190553(B2) 申请公布日期 2015.11.17
申请号 US201113991496 申请日期 2011.11.02
申请人 OSRAM Opto Semiconductors GmbH 发明人 Luruthudass Annaniah;Vicknes Ratha Krishnan
分类号 H01L31/12;H01L31/147;H01L25/16 主分类号 H01L31/12
代理机构 DLA Piper LLP (US) 代理人 DLA Piper LLP (US)
主权项 1. An optoelectronic semiconductor component comprising a housing, a radiation-emitting semiconductor chip and a radiation-detecting semiconductor chip, wherein: a first cavity and a second cavity are formed in the housing, the radiation-emitting semiconductor chip has an active layer that generates radiation and is arranged in the first cavity, which is potted with a first potting compound, the radiation-detecting semiconductor chip has an active layer that detects radiation and is arranged in the second cavity, which is potted with a second potting compound, and absorber particles are embedded in the second potting compound, the absorber particles at least partly absorbing the radiation emitted by the radiation-emitting semiconductor chip, wherein the radiation-detecting semiconductor chip: 1) detects only radiation in a wavelength range that differs from the wavelength range of the emitted radiation of the radiation-emitting semiconductor chip, 2) generates visible radiation having a wavelength of 400 nm to 700 nm during operation, 3) detects IR radiation having a wavelength of 800 nm to 1500 nm, and 4) detects external sunlight and switches off the radiation-emitting semiconductor chip if sunlight is detected and switches on the radiation-emitting semiconductor chip if no sunlight is detected.
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