发明名称 Optical device including three-coupled quantum well structure having multi-energy level
摘要 An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer.
申请公布号 US9190545(B2) 申请公布日期 2015.11.17
申请号 US201414283797 申请日期 2014.05.21
申请人 SAMSUNG ELECTRONICS CO., LTD.;GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 Cho Yong-chul;Lee Yong-tak;Park Chang-young;Na Byung-hoon;Park Yong-hwa;Ju Gun-wu
分类号 H01S5/34;H01L31/0352;H01L31/0232;G02F1/017;H01L33/06;G02F1/015 主分类号 H01S5/34
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. An optical device comprising: an active layer comprising two outer barriers and a coupled quantum well disposed between the two outer barriers, wherein the coupled quantum well comprises a first quantum well layer, a second quantum well layer, and a third quantum well layer, a first coupling barrier disposed between the first quantum well layer and the second quantum well layer, and a second coupling barrier disposed between the second quantum well layer and the third quantum well layer, wherein a thickness of the first quantum well layer and a thickness of the third quantum well layer, disposed at opposite ends of the coupled quantum well, are each less than a thickness of the second quantum well layer disposed between the first quantum well layer and the third quantum well layer, and wherein an energy level of the first quantum well layer and an energy level of the third quantum well layer are each lower than an energy level of the second quantum well layer.
地址 Suwon-si KR